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History
2008 ⬩ 2009 ⬩ 2010 ⬩ 2011 ⬩ 2012 ⬩ 2013 ⬩ 2014
2015 ⬩ 2016 ⬩ 2017 ⬩ 2018 ⬩ 2019 ⬩ 2020 ⬩ 2021
2022 ⬩ 2023
2015 ⬩ 2016 ⬩ 2017 ⬩ 2018 ⬩ 2019 ⬩ 2020 ⬩ 2021
2022 ⬩ 2023
•Established and registered, with an initial capital of NT$5 million.Capital of NT$50 million raised, paid-in capital increased to NT$55 million.
2008-07
•N & P-channel 40V power MOSFET product series for CCFL backlight module launched and approved by customers.
•P-channel 30V Power MOSFETs for notebook battery management launched and approved by customers.
•Power MOSFETs for notebook CPU/GPU launched and approved by customers.
•Power MOSFETs for high performance desktop CPU/GPU launched and approved by customers.
•Capital of NT$145 million raised, paid-in capital increased to NT$200 million.
•P-channel 30V Power MOSFETs for notebook battery management launched and approved by customers.
•Power MOSFETs for notebook CPU/GPU launched and approved by customers.
•Power MOSFETs for high performance desktop CPU/GPU launched and approved by customers.
•Capital of NT$145 million raised, paid-in capital increased to NT$200 million.
2008-09
•N & P-channel 60V power MOSFET product series for CCFL backlight module launched and approved by customers.
•N-channel 20V power MOSFET product series with logic level Vth launched and approved by customers.
•N-channel 20V power MOSFET product series with logic level Vth launched and approved by customers.
2008-10
•Certified for SGS ISO 9001.
•High Voltage 600V and 650V Power MOSFET product series launched.
•High Voltage 500V Power MOSFET product series launched.
•N-channel 100V Power MOSFETs for automobile electronics and electrical tools launched and approved by customers.
•DFN5x6 packaged Power MOSFETs for notebook CPU and VGA card launched and approved by customers.
•N-channel 75V Power MOSFETs for e-bike launched and approved by customers.
•High Voltage 600V and 650V Power MOSFET product series launched.
•High Voltage 500V Power MOSFET product series launched.
•N-channel 100V Power MOSFETs for automobile electronics and electrical tools launched and approved by customers.
•DFN5x6 packaged Power MOSFETs for notebook CPU and VGA card launched and approved by customers.
•N-channel 75V Power MOSFETs for e-bike launched and approved by customers.
2008-11
•N-channel 150V Power MOSFETs with logic and normal level Vth for automobile electrics and electrical tools launched and approved by customers.
•P-channel 20V Power MOSFETs product series with logic level Vth launched and approved by customers.
•P-channel 20V Power MOSFETs product series with logic level Vth launched and approved by customers.
•High Voltage 700V Power MOSFET product series launched.
2009-04
•Complementary 100V Power MOSFET for motor driving launched and approved by customers.
2009-05
•DFN3x3 packaged 30V Power MOSFET product series with excellent thermal dispersion and compact size launched and approved by customers.
•N-channel 200V Power MOSFETs for automobile electrics launched and approved by customers.
•N-channel 200V Power MOSFETs for automobile electrics launched and approved by customers.
2009-07
•N-channel 80V Power MOSFETs product series for LED back light modules launched and approved by customers.
2009-08
•Logic level Vth N-channel Power MOSFET within compact SOT-23 and SC-70 package launched for portable electronics.
2009-11
•Capital of NT$50 million raised, paid-in capital increased to NT$250 million.
•Logic level Vth P-channel Power MOSFET within compact SOT-23 and SC-70 package launched for portable electronics.
2010-06
•300mA, 2A and 3A Low Drop Out (LDO) Linear Regulators launched.
2010-07
•Capital of NT$17 million raised, paid-in capital increased to NT$267 million.
2010-09
•DC/DC step-down PWM IC for synchronized and non-synchronized architecture launched.
2010-10
•N-channel 250V Power MOSFETs product series for LED back light modules launched and approved by customers.
2010-12
•30W AC/DC PWM IC with the lowest start-up current among competitors’ products, less than 6uA, launched.
•High Voltage 900V Power MOSFET product series launched.
•High Voltage 800V Power MOSFET product series launched.
•High Voltage 900V Power MOSFET product series launched.
•High Voltage 800V Power MOSFET product series launched.
•30W AC/DC PWM IC with no load power consumption less than 100mW launched.
•Switching type LED driver IC launched. The first product provides complete LED short circuit protection in Taiwan.
•Switching type LED driver IC launched. The first product provides complete LED short circuit protection in Taiwan.
2011-06
•DC/DC step-down Switching Regulator with integrated high side Power MOSFET launched.
•90W AC/DC PWM IC with integrated high voltage start up MOSFET and no load power consumption less than 50mW launched.
•90W AC/DC PWM IC with integrated high voltage start up MOSFET and no load power consumption less than 50mW launched.
2011-10
•Capitalization from retained earnings of NT$11.271M; paid-in capital increased to NT$278.271M.
2011-12
•90W AC/DC Switching Regulator with integrated 700V high voltage start up and switching Power MOSFET launched.
•Power MSFET with compact DFN2x2 package product series launched.
2012-06
•DDR3 Linear Regulator launched and approved by customers.
2012-08
•Capitalization from retained eamings of NT$21.729M; paid-in capital increased NT$300M.
2012-09
•Public offering of stocks.
2012-10
•Compact package type DC/DC step-down PWM IC capable for external reference voltage launched and approved by customers.
2012-12
•Certified for SGS ISO 14001.
•Compact package type 1A and 3A LDO with precision output voltage launched and approved by customers.
•Registered as an emerging stock company.
•Compact package type 1A and 3A LDO with precision output voltage launched and approved by customers.
•Registered as an emerging stock company.
•Certified for SGS IECQ QC080000.
•Ultra low parasitic capacitance N-channel 30V Power MOSFET for switching loss reduction launched.
•Ultra low parasitic capacitance N-channel 30V Power MOSFET for switching loss reduction launched.
2013-03
•Ultra low parasitic capacitance N-channel 100V Power MOSFET for switching loss reduction launched.
2013-04
•30W AC/DC PWM IC with external over temperature protection launched.
•Switching type LED driver IC with precision constant current and high power factor launched.
•Switching type LED driver IC with precision constant current and high power factor launched.
2013-05
•30W AC/DC PWM IC with brown-out protection launched.
2013-06
•Ultra low parasitic capacitance N-channel 60V Power MOSFET for switching loss reduction launched.
2013-09
•Capitalization from retained eamings of NT$9.405Millon; paid-in capital increased NT$309.405Million.
2013-10
•To Approve the Issuance of RSA(Restricted Stock Awards) NT$ 15M; paid-in capital increased NT$324.405M.
•Low VF/ Low IR 100V Trench Schottky launched for electrical power transfer efficiency optimization.
2014-04
•Establish subsidiary companies,EXCELLENT MEGA CORP.,EXCELLENT Mega Investment Corp.
2014-06
•Cancellation of RSA(Restricted Stock Awards) NT$0.88M; paid-in capital increased NT$323.525M.
2014-08
• Low VF/ Low IR 45V/50V Trench Schottky launched for electrical power transfer efficiency optimization.
2014-09
•Company decided to acquire a new office afcility.
2014-10
•WLCSP Power MOSFET with tiny package size, 0.8mm x 0.8mm, launched.
•Establish subsidiary company in Shenzhen, China.Shenzhen Jie Ding Technology Co., Ltd.
•Establish subsidiary company in Shenzhen, China.Shenzhen Jie Ding Technology Co., Ltd.
2014-12
•Company address was changed to 4F.-1 No.22, Taiyuan St., Zhubei City, Hsinchu County 30288, Taiwan(R.O.C).
•Cancellation of RSA(Restricted Stock Awards) NT$3.504M;paid-in capital increased NT$320.021M.
•600V/650V HV N-type SJ-MOSFET launched for high efficiency electrical switiching power.
•Cancellation of RSA(Restricted Stock Awards) NT$3.504M;paid-in capital increased NT$320.021M.
•600V/650V HV N-type SJ-MOSFET launched for high efficiency electrical switiching power.
•Achieved COT DC/DC converter technology and launched 3A LV converter products which meet the design request of high efficiency power transfer.
•Low VF/ Low IR 120V Trench Schottky launched for electrical power transfer efficiency optimization .
•Low VF/ Low IR 120V Trench Schottky launched for electrical power transfer efficiency optimization .
2015-03
•Developed the fast turn-on & low Ron load switch which can meet the timing request of Skylake platform CPUs.
2015-05
•Developed the AC to DC power switch which integrate HV process and X-cap discharge function. It can greatly reduce the power loss in standby mode and desin cost.
•Ultra low parasitic capacitance 80V N-channel Power MOSFET for switching loss reduction launched.
•Ultra low parasitic capacitance 80V N-channel Power MOSFET for switching loss reduction launched.
2015-09
•3A linear regulator EM5108, developed and put into mass production.
•Low on-voltage, low cost, load switch EM5202, developed and put into mass production.
•Low on-voltage, low cost, load switch EM5202, developed and put into mass production.
2015-10
•Approved of U.S.A patent No. US9,153,652B2 - POWER SEMICONDUCTOR DEVICE AND EDGE TERMINAL STRUCTURE THEREOF INCLUDING AN L-SHAPED ELECTRIC-PLATE.
2015-12
•30VN-type S.G-MOSFET launched for high efficiency electrical switching power.
•Cancellation of RSA(Restricted Stock Awards) NT$3.832M;paid-in capital increased NT$316.189M.
•Cancellation of RSA(Restricted Stock Awards) NT$3.832M;paid-in capital increased NT$316.189M.
•Ultra low Ron(45mOhm)High current(2.5A~3.4A) for Type C USB Switch.
•Low Ron(60mOhm) USB Switch with reverse voltage protection.
•Low Ron(60mOhm) USB Switch with reverse voltage protection.
2016-03
•2A LV High Efficiency Step Down DC/DC Converter.
2016-05
•40VN-type S.G-MOSFET launched for high efficiency switching power converter.
2016-07
•Approved of U.S.A patent No. US9,502,511B2 - TRENCH INSULATED GATE BIPOLAR TRANSISTOR AND EDGE TERMINAL STRUCTURE INCLUDING AN L-SHAPED ELECTRIC PLATE CAPABLE OF RAISING A BREAKDOWN VOLTAGE.
2016-08
•Ranked 59nd among IC Design house according to the evaluation of Taiwan Ratings.
2016-09
•Adjustable and low quiescent current 1A linear regulator.
•Single channel ,low quiescent current 2A Load Switch.
•High efficiency & integration Power Mux Switch(2CH) for Power Control.
•Low Ron(60mOhm) USB Switch with reverse voltage protection.
•Single channel ,low quiescent current 2A Load Switch.
•High efficiency & integration Power Mux Switch(2CH) for Power Control.
•Low Ron(60mOhm) USB Switch with reverse voltage protection.
2016-11
•Certified as an Authorized Economic Operator (AEO) business by Customs Administration, ROC.
•100VN-type S.G-MOSFET launched for high efficiency switching power converter.
•100VN-type S.G-MOSFET launched for high efficiency switching power converter.
2016-12
•Cancellation of RSA(Restricted Stock Awards) NT$4.629M;paid-in capital increased NT$311.560M.
•High Efficiency 3A Linear Regulator with power good control.
•High Efficiency 3A Linear Regulator with power good control.
•80V N-type S.G-MOSFET launched for high efficiency switching power.
2017-04
•200mA/500mA USB Switch with reverse protection function launched and pass UL approval.
•Fast turn on and protection recovery Power Switch lunched for Power Mux application.
•Fast turn on and protection recovery Power Switch lunched for Power Mux application.
2017-05
•Ultra low Ron 0.85 mohm 30V N-type S.G-MOSFET launched for high efficiency electrical switching power.
•Approved of U.S.A patent No. US9,653,560B1 - METHOD OF FABRICATING POWER MOSFET.
•Approved of U.S.A patent No. US9,659,921B2 - POWER SWITCH DEVICE.
•Approved of U.S.A patent No. US9,653,560B1 - METHOD OF FABRICATING POWER MOSFET.
•Approved of U.S.A patent No. US9,659,921B2 - POWER SWITCH DEVICE.
2017-06
•2A DC/DC PWM Converter lunched which allows low capacitance and inductance external components.
2017-08
•Ranked at the 57th position among Taiwan based IC Design houses according to the evaluation of China Credit Information Service LTD.
•Approved of Taiwan patent No. M547757-POWER CHIP AND STRUCTURE OF TRANSISTOR.
•Approved of Taiwan patent No. M547757-POWER CHIP AND STRUCTURE OF TRANSISTOR.
2017-09
•HV Load Switch Controller lunched for TV and Monitor Application.
•Approved of U.S.A patent No. US9,761,464B1- POWER MOSFET AND MANUFACTURING METHOD THEREOF.
•Approved of U.S.A patent No. US9,761,464B1- POWER MOSFET AND MANUFACTURING METHOD THEREOF.
•Capital of NT$41.55 million raised, paid-in capital increased to NT$353.11 million.
2018-02
•Approved of Taiwan patent No. I643253 - Power MOSFET AND MANUFACTURING METHOD THEREOF.
2018-03
•HV load swich controller with programmable soft Stat Time.
•3A LV high efficiency fast transient Step Down DC/DC Converter.
•Ultra low Ron 1.8 mohm 30V N-type S.G-MOSFET launched for high efficiency electrical switching power within DFN3X3 tiny package.
•3A LV high efficiency fast transient Step Down DC/DC Converter.
•Ultra low Ron 1.8 mohm 30V N-type S.G-MOSFET launched for high efficiency electrical switching power within DFN3X3 tiny package.
2018-04
•150mA high voltage Low IQ linear regulator.
•Approved of U.S.A patent No. US9,941,357B2 - POWER MOSFET.
•Approved of U.S.A patent No. US9,941,357B2 - POWER MOSFET.
2018-05
•Ultra low Ron: N1_2.5 mohm + N2_0.85 mohm /30V N-type S.G-MOSFET launched for high efficiency electrical switching power within DFN5X6 Dual chips package.
2018-06
•2A LV high efficiency fast transient low standby current Step Down DC/DC Converter.
2018-07
•Low Ron(60mOhm) 1A/1.5A USB-Switch with reverse voltage protection.
•Low Ron: N1_5 mohm + N2_2 mohm /30V N-type S.G-MOSFET launched for high efficiency electrical switching power within DFN5X6 Dual chips package.
•Low Ron: N1_5 mohm + N2_2 mohm /30V N-type S.G-MOSFET launched for high efficiency electrical switching power within DFN5X6 Dual chips package.
2018-08
•Awarded the Certificate of 2018 D&B TOP 1000 SMEs Elite Award.
•Ranked at the 42th position among Taiwan based IC Design houses according to the evaluation of China Credit Information Service LTD.
•Ultra low Ron 2.9 mohm 40V N-type S.G-MOSFET launched for high efficiency electrical switching power within DFN3X3 tiny package.
•Ranked at the 42th position among Taiwan based IC Design houses according to the evaluation of China Credit Information Service LTD.
•Ultra low Ron 2.9 mohm 40V N-type S.G-MOSFET launched for high efficiency electrical switching power within DFN3X3 tiny package.
2018-12
•Low Ron(30mOhm) 5A/20V USB-PD and Power MUX Switch with reverse voltage protection.
•Approved of Taiwan patent No. I643253 - Power MOSFETAND MANUFACTURING METHOD THEREOF.
•Approved of Taiwan patent No. I643253 - Power MOSFETAND MANUFACTURING METHOD THEREOF.
•VOLTAGE CONVERSION CIRCUIT AND CONTROL CIRCUIT THEREOF.
2019-04
•HV load swich controller with programmable Soft Stat Time and Power Good Indicator function.
2019-06
•Low Gate resistance 30VN MOSFET launched for high speed switching power device.
2019-07
•Ranked at the 40th position among Taiwan based IC Design houses according to the evaluation of China Credit Information Service LTD.
2019-08
•Awarded the Asia's 200 Best Under A Billion of Forbes Asia in 2019 .
•Awarded the TOP 100 Fastest-Growing Enterprise of CommonWealth Magazine in 2019.
•Awarded the Certificate of the 5th Potential Taiwan Mittelstand.
•Awarded the TOP 100 High-Value Enterprises in Taiwan" by Digital Times Magazine in 2019.
•Low Cost and High Efficiency Load Wwitch.。
•Low IQ linear regulator with Power Good Indicator
•Awarded the TOP 100 Fastest-Growing Enterprise of CommonWealth Magazine in 2019.
•Awarded the Certificate of the 5th Potential Taiwan Mittelstand.
•Awarded the TOP 100 High-Value Enterprises in Taiwan" by Digital Times Magazine in 2019.
•Low Cost and High Efficiency Load Wwitch.。
•Low IQ linear regulator with Power Good Indicator
2019-09
•Low FOM 55mohm*nQ 30V N-type S.G-MOSFET launched for high efficiency electrical switching power device.
2019-10
•Approved of U.S.A patent No. US10,388,784B2 - POWER CHIP AND STRUCTURE OF TRANSISTOR.
2019-11
•VOLTAGE CONVERTING APPARATUS FOR IMPROVE STABILITY OF THE COMPARISON OPRERATION THEREOF.
•High voltage hight current DC/DC Converter for GPU application.
•Approved of Taiwan patent No. I679770 - GALLIUM NITRIDE HEMT AND GATE STRUCTURE THEREOF.
•High voltage hight current DC/DC Converter for GPU application.
•Approved of Taiwan patent No. I679770 - GALLIUM NITRIDE HEMT AND GATE STRUCTURE THEREOF.
2019-12
•Low Ron and Fast Turn on laod switch with Power Good Indicator function.
•High Power 250W 60V N-type S.G-MOSFET launched for high efficiency electrical switching power device.
•High Power 250W 60V N-type S.G-MOSFET launched for high efficiency electrical switching power device.
•Approved of Taiwan patent No. [I683516]; POWER SWITCH CIRCUIT.
•Low Ron resistance common drain 30VN MOSFET launched for bi-direction protection switching power device.
•Low Ron resistance common drain 30VN MOSFET launched for bi-direction protection switching power device.
2020-03
•Low Cost and High Efficiency Load Switch.
2020-05
•Awarded the TOP 100 High Value Enterprise by Bussiness Next Magazine in 2020.
•Awarded the Taiwan Top 2000 Enterprise by CommonWealth Magazine ranked No. 1084 in 2020.
•1A high efficiency fast transient with current Sinck Capability Voltage Regulator.
•Awarded the Taiwan Top 2000 Enterprise by CommonWealth Magazine ranked No. 1084 in 2020.
•1A high efficiency fast transient with current Sinck Capability Voltage Regulator.
2020-06
•Approved of U.S.A patent No. [US10,693,453B1]: POWER SWITCH CIRCUIT .
•Low Ron resistance 100VN 2mOhm S.G-MOSFET launched for high efficiency electrical switching power device.
•Low Ron resistance 100VN 2mOhm S.G-MOSFET launched for high efficiency electrical switching power device.
2020-07
•Ranked at the 37th position among Taiwan based IC Design houses according to the evaluation of China Credit Information Service LTD.
2020-08
•Dual Channel Low Ron and Fast Turn on Load switch.
•30V N-type Driver MOSFET launched for high efficiency electrical switching power device.
•Awarded the Asia's Best Under A Billion by Forbes Asia Magazine in 2020.
•30V N-type Driver MOSFET launched for high efficiency electrical switching power device.
•Awarded the Asia's Best Under A Billion by Forbes Asia Magazine in 2020.
2020-09
•Low FOM 40mohm*nQ 30V N-type S.G-MOSFET launched for high efficiency electrical switching power device.
2020-10
•Approved of Taiwan patent No. [I708464] POWER CIRCUIT.
•Approved of U.S.A patent No. US10,784,366B2 - GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR AND GATE STRUCTURE THEREOF.
•Approved of U.S.A patent No. US10,784,366B2 - GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR AND GATE STRUCTURE THEREOF.
2020-11
•Approved of U.S.A patent No.[US10,826,491B1] ; CONTROL CIRCUIT FOR LOAD SWITCH.
•Approved of U.S.A patent No. [US10,826,288B1] POWER CIRCUIT.
•Low voltage hight current DC/DC Step Down Converter for GPU application.
•Approved of U.S.A patent No. [US10,826,288B1] POWER CIRCUIT.
•Low voltage hight current DC/DC Step Down Converter for GPU application.
2020-12
•Dual Channel Low Ron and High Accuracy Current Prtection Laod switch.
•Finalist for the CEO of the Year & Excellence of the Year by the 11th annual edition of the LE FONTI TV AWARDS.
2021-03
•Awarded the FT Asia-Pacific High-Growth Companies 2021 by FINANCIAL TIMES.
2021-05
•Awarded the Taiwan Top 2000 Enterprise by CommonWealth Magazine ranked No. 979 in 2021.
•Intelligent adjustment power switch controller.
•Approved of U.S.A patent No. US10,985,032B2 - POWER MOSFET - POWER MOSFET.
•Intelligent adjustment power switch controller.
•Approved of U.S.A patent No. US10,985,032B2 - POWER MOSFET - POWER MOSFET.
2021-06
•Awarded the TOP 100 High Value Enterprise by Bussiness Next Magazine in 2021.
2021-07
•Ranked at the 36th position among Taiwan based IC Design houses according to the evaluation of China Credit Information Service LTD.
•High voltage high efficiency DC/DC Step Down Converter for GPU application.
•High voltage high efficiency DC/DC Step Down Converter for GPU application.
2021-08
•Programable Low Ron USB PD Power Switch.
2021-09
•Awarded the Certificate of the 6th Potential Taiwan Mittelstand.
•Ultra-Low Quiescent Current ,High Voltage Linear Regulator.
•Approved of TW. patent No. I739252 - TRENCH MOSFET AND MANUFACTURING METHOD OF THE SAME.
•Ultra-Low Quiescent Current ,High Voltage Linear Regulator.
•Approved of TW. patent No. I739252 - TRENCH MOSFET AND MANUFACTURING METHOD OF THE SAME.
2021-10
•Awarded the Certificate of the 2021 i-Sport Corporate Recognition by Sports Administration, Ministry of Education.
•High efficiency 1A fast transient Voltage Regulator.
•30V 1.1G Cell/Inch^2 N-type Driver MOSFET launched for low Rdson and high efficiency electrical switching power device.
•High efficiency 1A fast transient Voltage Regulator.
•30V 1.1G Cell/Inch^2 N-type Driver MOSFET launched for low Rdson and high efficiency electrical switching power device.
•Approved of China. patent No.4959926 -Power Switch.
2022-02
•Approved of U.S.A patent No. US11,258,438B1 -CONTROL DEVICE OF POWER SWITCH.
2022-03
•Awarded Best Consumer Electronics eTailer 2022- Taiwan by Acquisition International.
2022-05
•Approved of China. patent No.5139222 -Power Switch Circuit.
•Awarded the Taiwan Top 2000 Enterprise by CommonWealth Magazine.
•Awarded the Taiwan A+ Enterprise 2022 by Global Views.
•Awarded the Taiwan Top 2000 Enterprise by CommonWealth Magazine.
•Awarded the Taiwan A+ Enterprise 2022 by Global Views.
2022-06
•Intelligent Moror Driver for Robotic Vacuum Cleaner.
•Approved of TW. patent No. M628743 - Trench Power MOSFET.
•Ranked at the 38th position among Taiwan based IC Design houses according to the evaluation of China Credit Information Service LTD.
•Approved of TW. patent No. M628743 - Trench Power MOSFET.
•Ranked at the 38th position among Taiwan based IC Design houses according to the evaluation of China Credit Information Service LTD.
2022-07
• Low FOM 63mohm*nQ 40V N-type S.G-MOSFET launched for high efficiency electrical switching power device.
•Awarded the TOP 100 High Value Enterprise by Bussiness Next Magazine.
•Awarded the TOP 100 High Value Enterprise by Bussiness Next Magazine.
2022-08
•Low voltage hight current DC/DC Step Down Converter for GPU application.
2022-09
•Approved of China. patent No.5491765 -Control Circuit Thereof for Power Switch.
2022-10
•Awarded the 17th Golden Torch Awards for the top ten Enterprises by OEMA.
•Approved of TW. patent No. I779245 - GATE STRUCTURE OF GALLIUM NITRIDE HEMT.
•Approved of TW. patent No. I779245 - GATE STRUCTURE OF GALLIUM NITRIDE HEMT.
2022-11
•Programable Low Ron USB PD Power Switch.
•30V N-type 2nd Gen Driver MOSFET launched for high efficiency electrical switching power device.
•Programable Low Ron Low Cost USB 1CH PD Power Switch.
•650V Low VF SiC Diode launched for high efficiency electrical switching power device.
•30V N-type 2nd Gen Driver MOSFET launched for high efficiency electrical switching power device.
•Programable Low Ron Low Cost USB 1CH PD Power Switch.
•650V Low VF SiC Diode launched for high efficiency electrical switching power device.
2022-12
•CHR Healthy Corporate Citizenship Promise Enterprise by Common Health Magazine.
•Approved of US. patent No. US115,880,21B2 - Trench Power MOSFET
•2CH Low Ron Oring Power Switch for USB PD3.0 Application
•Awarded High-Growth Companies Asia-Pacific 2023 by Financial Times.
•2CH Low Ron Oring Power Switch for USB PD3.0 Application
•Awarded High-Growth Companies Asia-Pacific 2023 by Financial Times.
2023-04
•Approved of TW. patent No. I798676 - Gallium Nitride High Eletron Mobility Tansistor
2023-06
•1CH Low Ron Power Switch for USB PD3.0 Application
•Awarded the Taiwan Top 2000 Enterprise by CommonWealth Magazine.
•Awarded the Taiwan A+ Enterprise 2023 by Global Views.
•Ranked at the 39th position among Taiwan based IC Design houses according to the evaluation of China Credit Information Service LTD.
•Awarded the Taiwan Top 2000 Enterprise by CommonWealth Magazine.
•Awarded the Taiwan A+ Enterprise 2023 by Global Views.
•Ranked at the 39th position among Taiwan based IC Design houses according to the evaluation of China Credit Information Service LTD.
2023-07
•LV 5V, Low Ron Load Switch with Complete protection function for Pannel Power Application
•HV 30V,Low Ron Pannel Power Load Switch with Complete protection function
•HV 30V,Low Ron Pannel Power Load Switch with Complete protection function
2023-09
•Awarded the 22th Golden Peak Awards for the top ten Enterprises by OEMA.
•Low Ron resistance 30VN 0.5mOhm S.G-MOSFET launched for high efficiency electrical switching power device.
•Low Ron resistance 30VN 0.5mOhm S.G-MOSFET launched for high efficiency electrical switching power device.
2023-10
•Low FOM 33mohm*nQ 30V N-type S.G-MOSFET launched for high efficiency electrical switching power device.
•LV,Ultra Low Standby Current LDO
•HV 30V,Untra Low Quiesecent Current LDO for USD PD3.1 Application
•LV,Ultra Low Standby Current LDO
•HV 30V,Untra Low Quiesecent Current LDO for USD PD3.1 Application
2023-11
•CHR Healthy Corporate Citizenship Promise Enterprise by Common Health Magazine
•Awarded the 1111 Job Bank 2023 Happy Enterprise Gold Award.
•Awarded the 1111 Job Bank 2023 Happy Enterprise Gold Award.
